GaN Systems and USI Form Strategic Partnership to Accelerate GaN Adoption in Electric Vehicles

GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today announced a strategic partnership with ASE Technology’s subsidiary, Universal Scientific Industrial Co., Ltd (USI), to co-develop GaN power modules for the EV market. As the electric vehicle shifts from using legacy silicon power transistors to the increased performance of GaN, power modules are also transitioning to meet the demands of low heat loss and superior voltage control in the power conversion process. GaN power modules enable higher efficiency, increased EV range, and increased EV performance. “We are proud to partner with an industry leader like GaN Systems,” said JP Shi, USI’s SVP of Strategic Investment. “We have worked with GaN Systems for years and are impressed with the company’s leadership in high reliability, automotive-qualified GaN – an essential building block for EVs. We look forward to building optimized and highly efficient modules that will be the cornerstone of best-in-class DC-DC converters, on-board chargers, and traction inverters.”

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