ROHM Semiconductor today announced it has developed the industry’s highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices – optimized for power supply circuits in industrial and communication equipment. In recent years, due to the rising demand for server systems in response to the growing number of IoT devices, improving power conversion efficiency and reducing size have become important social issues that require further advancements in the power device sector. Along with mass-producing industry-leading SiC devices and a variety of feature-rich silicon devices, ROHM has developed GaN devices featuring superior high-frequency operation in the medium-voltage range. Cultivating technology that increases the rated gate-source voltage allows ROHM to propose a wider range of power solutions for a variety of applications.
TALLAHASSEE, FL – Advanced Manufacturing International (AMI) has been awarded a $2M grant