Toshiba Electronic Devices & Storage Corporation (“Toshiba”) today announced that it will construct a new 300-milimeter wafer fabrication facility for power semiconductors at its main discrete semiconductor production base, Kaga Toshiba Electronics Corporation, in Ishikawa Prefecture. Construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with the production start of Phase 1 scheduled for within fiscal 2024. When Phase 1 reaches full capacity, Toshiba’s power semiconductor production capacity will be 2.5 times that of fiscal 2021. Power devices are essential components for managing and reducing power consumption in every kind of electronic equipment, and for achieving a carbon neutral society. Current demand is expanding on vehicle electrification and the automation of industrial equipment, with very strong demand for low-voltage MOSFETs (metal oxide semiconductor field effect transistors) and IGBTs (insulated-gate bipolar transistors) and other devices. To date, Toshiba has met this demand growth by increasing production capacity on 200-milimeter lines, and expediting the start of production on 300-milimeter production lines from the first half of fiscal 2023 to the second half of fiscal 2022. Decisions on the new fab’s overall capacity and equipment investment, the start of production, production capacity and production plan will reflect market trends.
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