For all the recent advances in integrated lithium niobate photonic circuits — from frequency combs to frequency converters and modulators — one big component has remained frustratingly difficult to integrate: lasers. Long haul telecommunication networks, data center optical interconnects, and microwave photonic systems all rely on lasers to generate an optical carrier used in data transmission. In most cases, lasers are stand-alone devices, external to the modulators, making the whole system more expensive and less stable and scalable. Now, researchers from the Harvard John A. Paulson School of Engineering and Applied Sciences (SEAS) in collaboration with industry partners at Freedom Photonics and HyperLight Corporation, have developed the first fully integrated high-power laser on a lithium niobate chip, paving the way for high-powered telecommunication systems, fully integrated spectrometers, optical remote sensing, and efficient frequency conversion for quantum networks, among other applications.
TALLAHASSEE, FL – Advanced Manufacturing International (AMI) has been awarded a $2M grant